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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK414 description drain current C i d = 8a@ t c =25 drain source voltage- : v dss = 140v(min) fast switching speed applications high speed switching. high cutoff frequency. no secondary breakdown. suitable for switching regulator dc-dc converter, pwm amplifiers and ultrasonic power oscillators. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 160 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 8 a p tot total dissipation@tc=25 100 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK414 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 160 v v gs( th ) gate threshold voltage v ds =10 v gs ; i d =1ma 2.0 5.0 v r ds( on ) drain-source on-stage resistance v gs =15v; i d = 4a 0.4 0.5 i gss gate source leakage current v gs = 20v;v ds = 0 1 ua i dss zero gate voltage drain current v ds = 140v; v gs = 0 1 ma v sd diode forward voltage i f = 4a; v gs =0 0.9 v tr rise time v gs =15v;i d =2a;r l =15 35 ns ton turn-on time 50 ns tf fall time 50 ns toff turn-off time 110 ns pdf pdffactory pro www.fineprint.cn |
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